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hexfet power mosfet notes through are on page 9 features and benefits applications ? synchronous mosfet for high frequency buck converters pqfn 5x6 mm absolute maximum ratings parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i d @ t c(bottom) = 25c continuous drain current, v gs @ 10v i d @ t c(bottom) = 100c continuous drain current, v gs @ 10v i d @ t c = 25c continuous drain current, v gs @ 10v (package limited) i dm pulsed drain current p d @t a = 25c power dissipation p d @t c(bottom) = 25c power dissipation linear deratin g factor w/c t j operating junction and t stg storage temperature range v w a c max. 23 57 200 20 30 18 90 50 -55 to + 150 3.6 0.029 54 v ds 30 v v gs max 20 v r ds(on) max (@v gs = 10v) 4.1 (@v gs = 4.5v) 6.3 q g typ. 14 nc i d (@t c(bottom) = 25c) 50 a m ? features benefits low thermal resistance to pcb (< 2.3c/w) enable better thermal dissipation low profile (<1.2mm) results in increased power density industry-standard pinout ? multi-vendor compatibility compatible with existin g surface mount techniques easier manufacturing rohs compliant containin g no lead, no bromide and no halo g en environmentally friendlier msl1, consumer qualification increased reliability

! note form quantity irfh8324trpbf pqfn 5mm x 6mm tape and reel 4000 irfh8324tr2pbf pqfn 5mm x 6mm tape and reel 400 eol notice #259 orderable part number package type standard pack

! d s g thermal resistance parameter typ. max. units r jc (bottom) junction-to-case ??? 2.3 r jc (top) junction-to-case ??? 32 c/w r ja junction-to-ambient ??? 35 r ja (<10s) junction-to-ambient ??? 23 static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 30 ??? ??? v ? v dss / ? t j breakdown voltage temp. coefficient ??? 0.019 ??? v/c r ds(on) static drain-to-source on-resistance ??? 3.3 4.1 ??? 5.0 6.3 v gs(th) gate threshold voltage 1.35 1.8 2.35 v v ds = v gs , i d = 50a ? v gs(th) gate threshold voltage coefficient ??? -6.2 ??? mv/c i dss drain-to-source leakage current ??? ??? 1.0 a ??? ??? 150 i gss gate-to-source forward leakage ??? ??? 100 gate-to-source reverse leakage ??? ??? -100 gfs forward transconductance 72 ??? ??? s q g total gate charge ??? 31 ??? nc q g total gate charge ??? 14 ??? q gs1 pre-vth gate-to-source charge ??? 4.4 ??? q gs2 post-vth gate-to-source charge ??? 2.2 ??? q gd gate-to-drain charge ??? 3.5 ??? q godr gate charge overdrive ??? 3.9 ??? q sw switch charge (q gs2 + q gd ) ??? 5.7 ??? q oss output charge ??? 13 ??? nc r g gate resistance ??? 1.1 ??? ? t d(on) turn-on delay time ??? 13 ??? t r rise time ??? 26 ??? t d(off) turn-off delay time ??? 14 ??? t f fall time ??? 8.5 ??? c iss input capacitance ??? 2380 ??? c oss output capacitance ??? 500 ??? c rss reverse transfer capacitance ??? 205 ??? avalanche characteristics parameter units e as sin g le pulse avalanche ener gy mj i ar avalanche current a diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current ( bod y diode ) v sd diode forward voltage ??? ??? 1.0 v t rr reverse recovery time ??? 16 24 ns q rr reverse recovery charge ??? 25 38 nc t on forward turn-on time time is dominated by parasitic inductance mosfet symbol na ns a pf nc v ds = 15v ??? v gs = 20v v gs = -20v ??? ??? 200 ??? ??? 50 conditions v gs = 0v, i d = 250a reference to 25c, i d = 1.0ma v gs = 10v, i d = 20a v ds = 24v, v gs = 0v v ds = 16v, v gs = 0v v dd = 15v, v gs = 4.5v v gs = 10v, v ds = 15v, i d = 20a v gs = 0v v ds = 10v conditions max. 94 20 ? = 1.0mhz t j = 25c, i f = 20a, v dd = 15v di/dt = 360 a/s t j = 25c, i s = 20a, v gs = 0v showing the integral reverse p-n junction diode. v gs = 4.5v, i d = 16a v gs = 4.5v typ. ??? r g =1.8 ? v ds = 10v, i d = 20a v ds = 24v, v gs = 0v, t j = 125c m ? i d = 20a i d = 20a

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! fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 6. typical gate charge vs.gate-to-source voltage fig 5. typical capacitance vs.drain-to-source voltage fig 4. normalized on-resistance vs. temperature 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 7.0v 5.0v 4.5v 3.5v 3.0v 2.8v bottom 2.5v 60s pulse width tj = 25c 2.5v 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.5v 60s pulse width tj = 150c vgs top 10v 7.0v 5.0v 4.5v 3.5v 3.0v 2.8v bottom 2.5v 1 2 3 4 5 6 7 8 v gs , gate-to-source voltage (v) 1.0 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 15v 60s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 20a v gs = 10v 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 5 10 15 20 25 30 35 40 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v v ds = 15v v ds = 6.0v i d = 20a

! fig 11. maximum effective transient thermal impedance, junction-to-case (bottom) fig 8. maximum safe operating area fig 9. maximum drain current vs. case (bottom) temperature fig 7. typical source-drain diode forward voltage fig 10. threshold voltage vs. temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v sd , source-to-drain voltage (v) 1.0 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 50a i d = 250a i d = 1.0ma i d = 1.0a 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 25 50 75 100 125 150 t c , case temperature (c) 0 10 20 30 40 50 60 70 80 90 i d , d r a i n c u r r e n t ( a ) limited by source bonding technology 0 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) tc = 25c tj = 150c single pulse 100sec 1msec 10msec dc limited by source bonding technology

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! fig 13. maximum avalanche energy vs. drain current fig 12. on-resistance vs. gate voltage fig 14b. unclamped inductive waveforms fig 14a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 15a. switching time test circuit fig 15b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f
1 0.1 + - 0 5 10 15 20 v gs, gate -to -source voltage (v) 2 3 4 5 6 7 8 9 10 11 12 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 20a t j = 25c t j = 125c 25 50 75 100 125 150 starting t j , junction temperature (c) 0 50 100 150 200 250 300 350 400 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 4.9a 9.4a bottom 20a

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! fig 16.
for n-channel hexfet power mosfets fig 17. gate charge test circuit fig 18. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr

? ? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period
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! pqfn 5x6 outline "e" package details !
" # # pqfn 5x6 outline "e" part marking xxxx xywwx xxxxx international rectifier logo part number (?4 or 5 digits?) marking code (per marking spec) assembly site code (per scop 200-002) date code pin 1 identifier lot code (eng mode - min last 4 digits of eati#) (prod mode - 4 digits of spn code) !"#$ %& ' &(())) ('# ( (# $% * '+ !"#,& ' &(())) ('# ( (# ,

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! pqfn 5x6 outline "e" tape and reel reel dimensions note: controlling dimensions in mm std reel quantity is 4000 parts. standard option (qty 4000) min 329.5 20.9 12.8 1.7 97 ref 13 code a b c d e f g max 330.5 21.5 13.5 2.3 99 17.4 14.5 min 12.972 0.823 0.504 0.067 3.819 0.512 max 13.011 0.846 0.532 0.091 3.898 0.571 metric imperial tr1 option (qty 400) imperial min 6.988 0.823 0.520 0.075 2.350 0.512 max 178.5 21.5 13.8 2.3 66 12 14.5 min 177.5 20.9 13.2 1.9 65 ref 13 metric max 7.028 0.846 0.543 0.091 2.598 0.571 #)

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! qualification standards can be found at international rectifier?s web site http://www.irf.com/product-info/reliability higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ applicable version of jedec standard at the time of product release.
repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 0.47mh, r g = 50 ? , i as = 20a. pulse width 400s; duty cycle 2%. r is measured at t j of approximately 90c. when mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of fr-4 material. calculated continuous current based on maximum allowable junction temperature. current is limited to 50a by source bonding technology. ms l 1 (per je de c j-s t d-020d ??? ) rohs compliant yes pqfn 5mm x 6mm qualification information ? moisture sensitivity level qualification level cons umer ?? (per je de c je s d47f ??? guidelines ) ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ revision history date comment 1/21/2014 ? updated ordering information to reflect the end-of-life (eol) of the mini-reel option (eol notice #259). ? updated data sheet with the new ir corporate template.

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